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VACANCY-MEDIATED ATOMIC TRANSPORT IN NANO-CRYSTALS

Abstract : Atomic transport in nano-crystals is still poorly studied experimentally. However, the knowledge of atomic transport kinetic and of the mechanisms allowing atoms to move in a volume exhibiting nano-scale dimensions (< 100 nm) is important for i) improving our fundamental knowledge concerning point defects' formation and migration energies, and atom-point defect interactions in nano-structures, as well as for ii) predicting mass transport in nano-structures, allowing the design of nano-structure fabrication processes to be developed at lower cost. In this article, atom probe tomography measurements were used to investigate the Ge distribution in 40 nm-wide Si nano-crystals in which the Ge flux was found to be ten times faster than in the bulk of a Si mono-crystal. The Ge atoms were found to be randomly distributed in the nano-crystals. No extended defect was found being able to explain an increase of Ge transport kinetic in the nano-crystals. Consequently, a scenario based on a higher equilibrium vacancy concentration at the nano-crystal surface (or interface) is proposed in order to explain the faster atomic kinetic measured in Si nano-crystals.
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Contributor : Alain Portavoce <>
Submitted on : Thursday, November 28, 2019 - 4:50:50 PM
Last modification on : Saturday, November 30, 2019 - 1:44:18 AM
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A. Portavoce, J Perrin-Toinin, K. Hoummada. VACANCY-MEDIATED ATOMIC TRANSPORT IN NANO-CRYSTALS. Reviews on Advanced Materials Science, 2016. ⟨hal-02385245⟩

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