Journal articles
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing
R. Milazzo
G. Impellizzeri
1
D. Piccinotti
D. de Salvador
2
A. Portavoce
3
A. La Magna
4
G. Fortunato
D. Mangelinck
3
V. Privitera
A. Carnera
E. Napolitani
1
A. Portavoce 3
Author
A. La Magna 4
Author
G. Fortunato
Author
D. Mangelinck 3
Author IdHAL : dominique-mangelinck
1
MATIS - MATIS CNR-INFM Dipartimento di Metodologie Fisiche e Chimiche (DMFCI) (Viale A. Doria 6, 95125 Catania - Italy)
- Università degli studi di Catania [Catania] (Piazza Università, 2 95131 Catania - Italy)
- INFN - Istituto Nazionale di Fisica Nucleare (Italy)
2
Dipartimento di Fisica e Astronomia "Galileo Galilei" (via Marzolo 8, I-35131 Padova - Italy)
- Universita degli Studi di Padova (Via 8 Febbraio 2, 35122 Padova - Italy)
3
IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (Faculté des Sciences
Avenue Escadrille Normandie Niemen
Case 142
13397 Marseille Cedex 20 - France)
- AMU - Aix Marseille Université : UMR7334 (Aix-Marseille Université Jardins du Pharo 58 Boulevard Charles Livon 13284 Marseille cedex 7 - France)
- UTLN - Université de Toulon : UMR7334 (Avenue de l'Université - BP 20132 - 83957 La Garde Cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7334 (France)
4
IMM - Istituto per la Microelettronica e Microsistemi [Catania] (Strada VIII, 5 - 95121 Catania - Italy)
- CNR - Consiglio Nazionale delle Ricerche (Piazzale Aldo Moro, 7, 00185 Roma RM - Italy)
Document type :
Journal articles
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https://hal-amu.archives-ouvertes.fr/hal-02385261
Contributor : Alain Portavoce <>
Submitted on : Thursday, November 28, 2019 - 4:56:10 PM
Last modification on : Saturday, June 20, 2020 - 4:18:06 PM
Contributor : Alain Portavoce <>
Submitted on : Thursday, November 28, 2019 - 4:56:10 PM
Last modification on : Saturday, June 20, 2020 - 4:18:06 PM
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- HAL Id : hal-02385261, version 1
- DOI : 10.1063/1.4973461
Citation
R. Milazzo, G. Impellizzeri, D. Piccinotti, D. de Salvador, A. Portavoce, et al.. Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing. Applied Physics Letters, American Institute of Physics, 2017, 110 (1), pp.011905. ⟨10.1063/1.4973461⟩. ⟨hal-02385261⟩
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