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Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

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https://hal-amu.archives-ouvertes.fr/hal-02385261
Contributor : Alain Portavoce <>
Submitted on : Thursday, November 28, 2019 - 4:56:10 PM
Last modification on : Saturday, June 20, 2020 - 4:18:06 PM

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R. Milazzo, G. Impellizzeri, D. Piccinotti, D. de Salvador, A. Portavoce, et al.. Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing. Applied Physics Letters, American Institute of Physics, 2017, 110 (1), pp.011905. ⟨10.1063/1.4973461⟩. ⟨hal-02385261⟩

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