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Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

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https://hal-amu.archives-ouvertes.fr/hal-02385367
Contributor : Alain Portavoce <>
Submitted on : Thursday, November 28, 2019 - 5:30:11 PM
Last modification on : Friday, November 29, 2019 - 2:31:26 AM

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O. Abbes, A. Portavoce, V. Le Thanh, C. Girardeaux, L. Michez. Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics. Applied Physics Letters, American Institute of Physics, 2013, 103 (17), pp.172405. ⟨10.1063/1.4827100⟩. ⟨hal-02385367⟩

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