Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

O. Abbes , A. Portavoce (1) , V. Le Thanh (2) , C. Girardeaux , L. Michez (3)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 CRMCN - Centre de recherche de la matière condensée et des nanosciences
3 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

O. Abbes, A. Portavoce, V. Le Thanh, C. Girardeaux, L. Michez. Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics. Applied Physics Letters, 2013, 103 (17), pp.172405. ⟨10.1063/1.4827100⟩. ⟨hal-02385367⟩