Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact

Khalid Hoummada; Gamra Tellouche; Ivan Blum; Alain Portavoce; Marion Descoins; Dominique Mangelinck

doi:10.1016/j.mee.2012.12.008

Journal articles

Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact

Khalid Hoummada ¹ Gamra Tellouche Ivan Blum ¹ Alain Portavoce ¹ Marion Descoins ¹ Dominique Mangelinck ¹

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02385371
Contributor : Alain Portavoce <>
Submitted on : Thursday, November 28, 2019 - 5:31:23 PM
Last modification on : Monday, March 29, 2021 - 3:08:09 PM

Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact

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Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact

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