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Journal Articles Microelectronic Engineering Year : 2013

Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact

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hal-02385371 , version 1 (28-11-2019)

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Khalid Hoummada, Gamra Tellouche, Ivan Blum, Alain Portavoce, Marion Descoins, et al.. Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact. Microelectronic Engineering, 2013, 107, pp.184-189. ⟨10.1016/j.mee.2012.12.008⟩. ⟨hal-02385371⟩
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