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Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact

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https://hal-amu.archives-ouvertes.fr/hal-02385371
Contributor : Alain Portavoce <>
Submitted on : Thursday, November 28, 2019 - 5:31:23 PM
Last modification on : Thursday, April 9, 2020 - 1:21:45 AM

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Khalid Hoummada, Gamra Tellouche, Ivan Blum, Alain Portavoce, Marion Descoins, et al.. Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact. Microelectronic Engineering, Elsevier, 2013, 107, pp.184-189. ⟨10.1016/j.mee.2012.12.008⟩. ⟨hal-02385371⟩

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