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Arsenic and phosphorus codiffusion during silicon microelectronic processes

N. Rodriguez 1 A. Portavoce 2 J. Delalleau C. Grosjean 3 V. Serradeil 3 C. Girardeaux 
1 University of Granada [Granada]
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 ST-ROUSSET - STMicroelectronics [Rousset]
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https://hal-amu.archives-ouvertes.fr/hal-02386094
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Friday, November 29, 2019 - 10:47:42 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM

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UNIV-TLN | CNRS | UNIV-AMU | IM2NP

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N. Rodriguez, A. Portavoce, J. Delalleau, C. Grosjean, V. Serradeil, et al.. Arsenic and phosphorus codiffusion during silicon microelectronic processes. Thin Solid Films, 2010, 518 (17), pp.5022-5027. ⟨10.1016/j.tsf.2010.03.039⟩. ⟨hal-02386094⟩

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