Arsenic and phosphorus codiffusion during silicon microelectronic processes

N. Rodriguez; A. Portavoce; J. Delalleau; C. Grosjean; V. Serradeil; C. Girardeaux

doi:10.1016/j.tsf.2010.03.039

Journal Articles Thin Solid Films Year : 2010

Arsenic and phosphorus codiffusion during silicon microelectronic processes

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N. Rodriguez

Function : Author

Universidad de Granada = University of Granada

A. Portavoce

Function : Author
PersonId : 864373
ORCID : 0000-0002-6390-1637

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

J. Delalleau

Function : Author

C. Grosjean

Function : Author

STMicroelectronics [Rousset]

V. Serradeil

Function : Author

STMicroelectronics [Rousset]

C. Girardeaux

Function : Author

Domains

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Alain Portavoce : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02386094

Submitted on : Friday, November 29, 2019-10:47:42 AM

Last modification on : Wednesday, February 8, 2023-5:11:10 PM

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hal-02386094 , version 1 (29-11-2019)

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HAL Id : hal-02386094 , version 1
DOI : 10.1016/j.tsf.2010.03.039

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N. Rodriguez, A. Portavoce, J. Delalleau, C. Grosjean, V. Serradeil, et al.. Arsenic and phosphorus codiffusion during silicon microelectronic processes. Thin Solid Films, 2010, 518 (17), pp.5022-5027. ⟨10.1016/j.tsf.2010.03.039⟩. ⟨hal-02386094⟩

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Arsenic and phosphorus codiffusion during silicon microelectronic processes

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