Skip to Main content Skip to Navigation
Journal articles

Measurement of As diffusivity in Ni2Si thin films

I. Blum 1 A. Portavoce 1 D. Mangelinck 1 R. Daineche K. Hoummada 1 J.L. Labar 2 V. Carron 3 J. Bernardini
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 MTA EK MFA, Konkoly Thege, Hungary
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
Document type :
Journal articles
Complete list of metadatas
https://hal-amu.archives-ouvertes.fr/hal-02386115
Contributor : Alain Portavoce <>
Submitted on : Friday, November 29, 2019 - 10:52:48 AM
Last modification on : Thursday, June 11, 2020 - 5:04:07 PM

Identifiers

Collections

UNIV-AMU | CEA | IM2NP | DRT | UNIV-TLN | LETI | CNRS | CEA-GRE

Citation

I. Blum, A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, et al.. Measurement of As diffusivity in Ni2Si thin films. Microelectronic Engineering, Elsevier, 2010, 87 (3), pp.263-266. ⟨10.1016/j.mee.2009.05.020⟩. ⟨hal-02386115⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

77