Skip to Main content Skip to Navigation
Journal articles

Nanometric size effect on Ge diffusion in polycrystalline Si

A. Portavoce 1 G. Chai L. Chow J. Bernardini 2
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 L2MP - Laboratoire matériaux et microélectronique de Provence
Document type :
Journal articles
Complete list of metadata
https://hal-amu.archives-ouvertes.fr/hal-02386156
Contributor : Alain Portavoce <>
Submitted on : Friday, November 29, 2019 - 11:04:32 AM
Last modification on : Tuesday, March 30, 2021 - 3:23:58 AM

Links full text

openaccess

Identifiers

Collections

UNIV-AMU | IM2NP | UNIV-TLN | CNRS

Citation

A. Portavoce, G. Chai, L. Chow, J. Bernardini. Nanometric size effect on Ge diffusion in polycrystalline Si. Journal of Applied Physics, American Institute of Physics, 2008, 104 (10), pp.104910. ⟨10.1063/1.3010297⟩. ⟨hal-02386156⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

68