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Journal articles

Nanometric size effect on Ge diffusion in polycrystalline Si

A. Portavoce 1 G. Chai L. Chow J. Bernardini 2 
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 L2MP - Laboratoire matériaux et microélectronique de Provence
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https://hal-amu.archives-ouvertes.fr/hal-02386156
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Friday, November 29, 2019 - 11:04:32 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM

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UNIV-TLN | CNRS | UNIV-AMU | IM2NP

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A. Portavoce, G. Chai, L. Chow, J. Bernardini. Nanometric size effect on Ge diffusion in polycrystalline Si. Journal of Applied Physics, American Institute of Physics, 2008, 104 (10), pp.104910. ⟨10.1063/1.3010297⟩. ⟨hal-02386156⟩

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