Journal Articles
Journal of Applied Physics
Year : 2008
Alain Portavoce : Connect in order to contact the contributor
https://hal-amu.archives-ouvertes.fr/hal-02386156
Submitted on : Friday, November 29, 2019-11:04:32 AM
Last modification on : Wednesday, February 8, 2023-5:11:10 PM
Cite
A. Portavoce, G. Chai, L. Chow, J. Bernardini. Nanometric size effect on Ge diffusion in polycrystalline Si. Journal of Applied Physics, 2008, 104 (10), pp.104910. ⟨10.1063/1.3010297⟩. ⟨hal-02386156⟩
24
View
0
Download