Nanometric size effect on Ge diffusion in polycrystalline Si - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2008

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hal-02386156 , version 1 (29-11-2019)

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A. Portavoce, G. Chai, L. Chow, J. Bernardini. Nanometric size effect on Ge diffusion in polycrystalline Si. Journal of Applied Physics, 2008, 104 (10), pp.104910. ⟨10.1063/1.3010297⟩. ⟨hal-02386156⟩
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