Nanometric size effect on Ge diffusion in polycrystalline Si

A. Portavoce; G. Chai; L. Chow; J. Bernardini

doi:10.1063/1.3010297

Journal Articles Journal of Applied Physics Year : 2008

Nanometric size effect on Ge diffusion in polycrystalline Si

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A. Portavoce

Function : Author
PersonId : 864373
ORCID : 0000-0002-6390-1637

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

G. Chai

Function : Author

L. Chow

Function : Author

J. Bernardini

Function : Author
PersonId : 850162

Laboratoire matériaux et microélectronique de Provence

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Alain Portavoce : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02386156

Submitted on : Friday, November 29, 2019-11:04:32 AM

Last modification on : Wednesday, February 8, 2023-5:11:10 PM

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hal-02386156 , version 1 (29-11-2019)

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HAL Id : hal-02386156 , version 1
DOI : 10.1063/1.3010297

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A. Portavoce, G. Chai, L. Chow, J. Bernardini. Nanometric size effect on Ge diffusion in polycrystalline Si. Journal of Applied Physics, 2008, 104 (10), pp.104910. ⟨10.1063/1.3010297⟩. ⟨hal-02386156⟩

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Nanometric size effect on Ge diffusion in polycrystalline Si

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