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Investigation of a new method for dopant characterization

J. Adrian 1 N. Rodriguez 2 F. Essely 3 G. Haller 4 C. Grosjean A. Portavoce 5 C. Girardeaux
1 ELF Atochem
2 University of Granada [Granada]
3 IMS - Laboratoire de l'intégration, du matériau au système
4 ST-ROUSSET - STMicroelectronics [Rousset]
5 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
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Journal articles
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https://hal-amu.archives-ouvertes.fr/hal-02386183
Contributor : Alain Portavoce <>
Submitted on : Friday, November 29, 2019 - 11:13:42 AM
Last modification on : Saturday, November 30, 2019 - 1:44:17 AM

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UNIV-AMU | IMS-BORDEAUX-FUSION | IM2NP | IMS-BORDEAUX | UNIV-TLN | CNRS

Citation

J. Adrian, N. Rodriguez, F. Essely, G. Haller, C. Grosjean, et al.. Investigation of a new method for dopant characterization. Microelectronics Reliability, Elsevier, 2007, 47 (9-11), pp.1599-1603. ⟨10.1016/j.microrel.2007.07.091⟩. ⟨hal-02386183⟩

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