Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces

A. Portavoce; M Kammler; R Hull; M. Reuter; F Ross

doi:10.1088/0957-4484/17/17/028

Journal Articles Nanotechnology Year : 2006

Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces

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A. Portavoce

Function : Author
PersonId : 864373
ORCID : 0000-0002-6390-1637

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

M Kammler

Function : Author

R Hull

Function : Author

M. Reuter

Function : Author

Institute of Environmental Physics [Bremen]

F Ross

Function : Author

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Alain Portavoce : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02386247

Submitted on : Friday, November 29, 2019-11:28:47 AM

Last modification on : Wednesday, February 8, 2023-5:11:10 PM

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hal-02386247 , version 1 (29-11-2019)

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HAL Id : hal-02386247 , version 1
DOI : 10.1088/0957-4484/17/17/028

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A. Portavoce, M Kammler, R Hull, M. Reuter, F Ross. Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces. Nanotechnology, 2006, 17 (17), pp.4451-4455. ⟨10.1088/0957-4484/17/17/028⟩. ⟨hal-02386247⟩

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Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces

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