Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001) - Archive ouverte HAL Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2004

Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

A. Portavoce
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
M. Kammler
  • Function : Author
R. Hull
  • Function : Author
M. Reuter
  • Function : Author
Institute of Environmental Physics [Bremen]
M. Copel
  • Function : Author
F. Ross
  • Function : Author

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Alain Portavoce  : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02386256

Submitted on : Friday, November 29, 2019-11:30:48 AM

Last modification on : Wednesday, February 8, 2023-5:11:10 PM

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hal-02386256 , version 1 (29-11-2019)

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A. Portavoce, M. Kammler, R. Hull, M. Reuter, M. Copel, et al.. Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001). Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70 (19), ⟨10.1103/PhysRevB.70.195306⟩. ⟨hal-02386256⟩

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