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Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

A. Portavoce 1 M. Kammler R. Hull M. Reuter 2 M. Copel F. Ross
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 IUP - Institute of Environmental Physics [Bremen]
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https://hal-amu.archives-ouvertes.fr/hal-02386256
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Friday, November 29, 2019 - 11:30:48 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM

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A. Portavoce, M. Kammler, R. Hull, M. Reuter, M. Copel, et al.. Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001). Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2004, 70 (19), ⟨10.1103/PhysRevB.70.195306⟩. ⟨hal-02386256⟩

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