Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

A. Portavoce; M. Kammler; R. Hull; M. Reuter; M. Copel; F. Ross

doi:10.1103/PhysRevB.70.195306

Journal articles

Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

A. Portavoce ¹ M. Kammler R. Hull M. Reuter ² M. Copel F. Ross

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

2 IUP - Institute of Environmental Physics [Bremen]

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02386256
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Friday, November 29, 2019 - 11:30:48 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM

Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

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Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

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