Journal Articles
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Year : 2004
Alain Portavoce : Connect in order to contact the contributor
https://hal-amu.archives-ouvertes.fr/hal-02386256
Submitted on : Friday, November 29, 2019-11:30:48 AM
Last modification on : Wednesday, February 8, 2023-5:11:10 PM
Cite
A. Portavoce, M. Kammler, R. Hull, M. Reuter, M. Copel, et al.. Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001). Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70 (19), ⟨10.1103/PhysRevB.70.195306⟩. ⟨hal-02386256⟩
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