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Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress

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https://hal-amu.archives-ouvertes.fr/hal-02386263
Contributor : Alain Portavoce <>
Submitted on : Friday, November 29, 2019 - 11:31:57 AM
Last modification on : Saturday, November 30, 2019 - 1:44:31 AM

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A. Portavoce, P. Gas, I. Berbezier, A. Ronda, J. Christensen, et al.. Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress. Journal of Applied Physics, American Institute of Physics, 2004, 96 (6), pp.3158-3163. ⟨10.1063/1.1781767⟩. ⟨hal-02386263⟩

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