Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress - Archive ouverte HAL Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2004

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Alain Portavoce  : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02386286

Submitted on : Friday, November 29, 2019-11:38:44 AM

Last modification on : Wednesday, February 8, 2023-5:11:10 PM

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hal-02386286 , version 1 (29-11-2019)

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A. Portavoce, I. Berbezier, P. Gas, A. Ronda. Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (15), ⟨10.1103/PhysRevB.69.155414⟩. ⟨hal-02386286⟩

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