Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress - Archive ouverte HAL Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2004

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress

(1) , (1) , (2) , (2)
1
2
Not file

Dates and versions

hal-02386286 , version 1 (29-11-2019)

Identifiers

Cite

A. Portavoce, I. Berbezier, P. Gas, A. Ronda. Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (15), ⟨10.1103/PhysRevB.69.155414⟩. ⟨hal-02386286⟩
22 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More