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Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress

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https://hal-amu.archives-ouvertes.fr/hal-02386286
Contributor : Alain Portavoce <>
Submitted on : Friday, November 29, 2019 - 11:38:44 AM
Last modification on : Friday, April 24, 2020 - 10:28:08 AM

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A. Portavoce, I. Berbezier, P. Gas, A. Ronda. Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2004, 69 (15), ⟨10.1103/PhysRevB.69.155414⟩. ⟨hal-02386286⟩

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