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Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress

A. Portavoce 1 I. Berbezier 1 P. Gas 2 A. Ronda 2
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 L2MP - Laboratoire matériaux et microélectronique de Provence
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https://hal-amu.archives-ouvertes.fr/hal-02386286
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Friday, November 29, 2019 - 11:38:44 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM

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A. Portavoce, I. Berbezier, P. Gas, A. Ronda. Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2004, 69 (15), ⟨10.1103/PhysRevB.69.155414⟩. ⟨hal-02386286⟩

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