The effect of Sb on the oxidation of Ge quantum dots

Y.S. Lim; F. Bassani; A. Portavoce; A. Ronda; S. Nozaki; I. Berbezier

doi:10.1016/S0921-5107(02)00716-X

Journal Articles Materials Science and Engineering: B Year : 2003

The effect of Sb on the oxidation of Ge quantum dots

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Y.S. Lim

Function : Author

F. Bassani

Function : Author
PersonId : 1188804
IdHAL : franck-bassani

Laboratoire des technologies de la microélectronique

A. Portavoce

Function : Author
PersonId : 864373
ORCID : 0000-0002-6390-1637

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

A. Ronda

Function : Author

Laboratoire matériaux et microélectronique de Provence

S. Nozaki

Function : Author
PersonId : 764708
ORCID : 0000-0002-6246-2767

I. Berbezier

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Domains

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Alain Portavoce : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02386306

Submitted on : Friday, November 29, 2019-11:42:47 AM

Last modification on : Wednesday, October 20, 2021-3:33:12 AM

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hal-02386306 , version 1 (29-11-2019)

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HAL Id : hal-02386306 , version 1
DOI : 10.1016/S0921-5107(02)00716-X

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Y.S. Lim, F. Bassani, A. Portavoce, A. Ronda, S. Nozaki, et al.. The effect of Sb on the oxidation of Ge quantum dots. Materials Science and Engineering: B, 2003, 101 (1-3), pp.190-193. ⟨10.1016/S0921-5107(02)00716-X⟩. ⟨hal-02386306⟩

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The effect of Sb on the oxidation of Ge quantum dots

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