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The effect of Sb on the oxidation of Ge quantum dots

Y.S. Lim F. Bassani 1 A. Portavoce 2 A. Ronda 3 S. Nozaki I. Berbezier 2 
1 LTM - Laboratoire des technologies de la microélectronique
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 L2MP - Laboratoire matériaux et microélectronique de Provence
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https://hal-amu.archives-ouvertes.fr/hal-02386306
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Friday, November 29, 2019 - 11:42:47 AM
Last modification on : Wednesday, October 20, 2021 - 3:33:12 AM

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CEA | UGA | UNIV-TLN | CNRS | UNIV-AMU | LTM | NANOMATERIALS | IM2NP

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Y.S. Lim, F. Bassani, A. Portavoce, A. Ronda, S. Nozaki, et al.. The effect of Sb on the oxidation of Ge quantum dots. Materials Science and Engineering: B, Elsevier, 2003, 101 (1-3), pp.190-193. ⟨10.1016/S0921-5107(02)00716-X⟩. ⟨hal-02386306⟩

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