Journal Articles
Materials Science and Engineering: B
Year : 2003
Alain Portavoce : Connect in order to contact the contributor
https://hal-amu.archives-ouvertes.fr/hal-02386306
Submitted on : Friday, November 29, 2019-11:42:47 AM
Last modification on : Wednesday, October 20, 2021-3:33:12 AM
Dates and versions
Identifiers
- HAL Id : hal-02386306 , version 1
- DOI : 10.1016/S0921-5107(02)00716-X
Cite
Y.S. Lim, F. Bassani, A. Portavoce, A. Ronda, S. Nozaki, et al.. The effect of Sb on the oxidation of Ge quantum dots. Materials Science and Engineering: B, 2003, 101 (1-3), pp.190-193. ⟨10.1016/S0921-5107(02)00716-X⟩. ⟨hal-02386306⟩
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