Simulation Model of a SiC Power MOSFET - Variables Estimation and Control of a Power Source

Abstract : An electro-thermal model of a power SiC MOSFET is proposed. The thermal model, is coupled with thephysical model through the interaction between the transistor power loss and the junction temperature. Forvalidation of this model, the simulation curves are compared to the manufacturer’s experimental curves. Asfirst application, a boost DC/DC converter is considered. An observer is proposed to estimate the MOSFETvoltage VDS, the power and the junction temperature. These estimates are used to control the converter. Theproposed model and estimator give sufficiently good temperature and power estimation. The Power sourceobtained using DC/DC converter is efficient, allowing the power loss reduction and robust.
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https://hal-amu.archives-ouvertes.fr/hal-02388283
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Submitted on : Sunday, December 1, 2019 - 4:22:18 PM
Last modification on : Monday, December 2, 2019 - 1:24:39 AM

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N. M'Sirdi, E. Baghaz, K. Frifita, A. Naamane, Mohamed Boussak. Simulation Model of a SiC Power MOSFET - Variables Estimation and Control of a Power Source. 14th International Conference on Informatics in Control, Automation and Robotics, Jul 2017, Madrid, Spain. pp.637-643, ⟨10.5220/0006460806370643⟩. ⟨hal-02388283⟩

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