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Journal articles

Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation

A. Ronda 1 I. Berbezier 2 A. Pascale 2 A. Portavoce 2 F. Volpi 3 
1 CRMCN - Centre de recherche de la matière condensée et des nanosciences
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 SIMaP - Science et Ingénierie des Matériaux et Procédés
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https://hal-amu.archives-ouvertes.fr/hal-02393594
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Wednesday, December 4, 2019 - 2:26:46 PM
Last modification on : Tuesday, December 7, 2021 - 2:08:08 PM

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A. Ronda, I. Berbezier, A. Pascale, A. Portavoce, F. Volpi. Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation. Materials Science and Engineering: B, Elsevier, 2003, 101 (1-3), pp.95-101. ⟨10.1016/S0921-5107(02)00661-X⟩. ⟨hal-02393594⟩

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