Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation

A. Ronda (1) , I. Berbezier (2) , A. Pascale (2) , A. Portavoce (2) , F. Volpi (3)

1 CRMCN - Centre de recherche de la matière condensée et des nanosciences
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 SIMaP - Science et Ingénierie des Matériaux et Procédés

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

A. Ronda, I. Berbezier, A. Pascale, A. Portavoce, F. Volpi. Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation. Materials Science and Engineering: B, 2003, 101 (1-3), pp.95-101. ⟨10.1016/S0921-5107(02)00661-X⟩. ⟨hal-02393594⟩