Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation - Archive ouverte HAL Access content directly
Journal Articles Materials Science and Engineering: B Year : 2003

Dates and versions

hal-02393594 , version 1 (04-12-2019)

Identifiers

Cite

A. Ronda, I. Berbezier, A. Pascale, A. Portavoce, F. Volpi. Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation. Materials Science and Engineering: B, 2003, 101 (1-3), pp.95-101. ⟨10.1016/S0921-5107(02)00661-X⟩. ⟨hal-02393594⟩
21 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More