Service interruption on Monday 11 July from 12:30 to 13:00: all the sites of the CCSD (HAL, Epiciences, SciencesConf, AureHAL) will be inaccessible (network hardware connection).
Skip to Main content Skip to Navigation
Journal articles

Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02393594
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Wednesday, December 4, 2019 - 2:26:46 PM
Last modification on : Tuesday, December 7, 2021 - 2:08:08 PM

Links full text

Identifiers

Collections

Citation

A. Ronda, I. Berbezier, A. Pascale, A. Portavoce, F. Volpi. Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation. Materials Science and Engineering: B, Elsevier, 2003, 101 (1-3), pp.95-101. ⟨10.1016/S0921-5107(02)00661-X⟩. ⟨hal-02393594⟩

Share

Metrics

Record views

24