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Auger spectroscopy thermodesorption of Sb on Si1-xGex layers grown on Si(1 0 0) substrates

Abstract : Desorption of Sb from Si 1Àx Ge x layers (x ¼ 0, 0.05, 0.1, 0.2, 1) grown by molecular beam epitaxy (MBE) on Si(1 0 0) substrates is investigated using Auger electron spectroscopy thermodesorption (TD-AES). Sb desorption process on Si 1Àx Ge x is well described by a first-order reaction. No extra TD-AES peaks are observed on Si 1Àx Ge x compared to Si. For 1 ML of Sb coverage the TD-AES peak shifts to lower temperature when Ge bulk concentration increases. The Sb monolayer desorbs at 801, 752, 740, 715, and 706°C for x ¼ 0, 0.05, 0.1, 0.2 and 1, respectively. We explain the non-linear decrease of the Sb desorption energy when x increases by the strong Ge surface segregation during the MBE growth of Si 1Àx Ge x layers, resulting in an almost pure Ge surface even for low x.
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Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Wednesday, December 4, 2019 - 2:37:09 PM
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  • HAL Id : hal-02393648, version 1



A. Portavoce, F. Bassani, A. Ronda, I. Berbezier. Auger spectroscopy thermodesorption of Sb on Si1-xGex layers grown on Si(1 0 0) substrates. Surface Science, Elsevier, 2002. ⟨hal-02393648⟩



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