Auger spectroscopy thermodesorption of Sb on Si1-xGex layers grown on Si(1 0 0) substrates

A. Portavoce (1) , F. Bassani (2) , A. Ronda (3) , I. Berbezier (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 LTM - Laboratoire des technologies de la microélectronique
3 CRMCN - Centre de recherche de la matière condensée et des nanosciences

Desorption of Sb from Si 1Àx Ge x layers (x ¼ 0, 0.05, 0.1, 0.2, 1) grown by molecular beam epitaxy (MBE) on Si(1 0 0) substrates is investigated using Auger electron spectroscopy thermodesorption (TD-AES). Sb desorption process on Si 1Àx Ge x is well described by a first-order reaction. No extra TD-AES peaks are observed on Si 1Àx Ge x compared to Si. For 1 ML of Sb coverage the TD-AES peak shifts to lower temperature when Ge bulk concentration increases. The Sb monolayer desorbs at 801, 752, 740, 715, and 706°C for x ¼ 0, 0.05, 0.1, 0.2 and 1, respectively. We explain the non-linear decrease of the Sb desorption energy when x increases by the strong Ge surface segregation during the MBE growth of Si 1Àx Ge x layers, resulting in an almost pure Ge surface even for low x.

Keywords: Antimony; Silicon; Germanium; Thermal desorption; Auger electron spectroscopy; Molecular beam epitaxy

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

A. Portavoce, F. Bassani, A. Ronda, I. Berbezier. Auger spectroscopy thermodesorption of Sb on Si1-xGex layers grown on Si(1 0 0) substrates. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2002. ⟨hal-02393648⟩