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Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

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https://hal-amu.archives-ouvertes.fr/hal-02393966
Contributor : Alain Portavoce <>
Submitted on : Wednesday, December 4, 2019 - 3:44:18 PM
Last modification on : Thursday, December 5, 2019 - 1:38:40 AM

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Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, et al.. Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate. Defect and Diffusion Forum, Trans Tech Publications, 2012, 323-325, pp.439-444. ⟨10.4028/www.scientific.net/DDF.323-325.439⟩. ⟨hal-02393966⟩

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