Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Omar Abbes (1) , Feng Xu (2) , Alain Portavoce (3) , Christophe Girardeaux (3) , Khalid Hoummada (3) , Vinh Le Thanh (1)

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
2 WHUT - Wuhan University of Technology
3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, et al.. Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate. Defect and Diffusion Forum, 2012, 323-325, pp.439-444. ⟨10.4028/www.scientific.net/DDF.323-325.439⟩. ⟨hal-02393966⟩