Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Omar Abbes; Feng Xu; Alain Portavoce; Christophe Girardeaux; Khalid Hoummada; Vinh Le Thanh

doi:10.4028/www.scientific.net/DDF.323-325.439

Journal articles

Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Omar Abbes ¹ Feng Xu ² Alain Portavoce ³ Christophe Girardeaux ³ Khalid Hoummada ³ Vinh Le Thanh ¹

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

2 WHUT - Wuhan University of Technology

3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02393966
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Wednesday, December 4, 2019 - 3:44:18 PM
Last modification on : Tuesday, November 8, 2022 - 10:08:08 AM

Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

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Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

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