Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate - Archive ouverte HAL Access content directly
Journal Articles Defect and Diffusion Forum Year : 2012
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hal-02393966 , version 1 (04-12-2019)

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Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, et al.. Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate. Defect and Diffusion Forum, 2012, 323-325, pp.439-444. ⟨10.4028/www.scientific.net/DDF.323-325.439⟩. ⟨hal-02393966⟩
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