Journal Articles
Defect and Diffusion Forum
Year : 2012
Alain Portavoce : Connect in order to contact the contributor
https://hal-amu.archives-ouvertes.fr/hal-02393966
Submitted on : Wednesday, December 4, 2019-3:44:18 PM
Last modification on : Friday, March 24, 2023-2:53:14 PM
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- HAL Id : hal-02393966 , version 1
- DOI : 10.4028/www.scientific.net/DDF.323-325.439
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Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, et al.. Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate. Defect and Diffusion Forum, 2012, 323-325, pp.439-444. ⟨10.4028/www.scientific.net/DDF.323-325.439⟩. ⟨hal-02393966⟩
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