Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays

R Hull; J Floro; M Gherasimova; J Graham; J. Gray; A. Portavoce; F Ross; J Thorp

doi:10.1088/1742-6596/209/1/012003

Journal Articles Journal of Physics: Conference Series Year : 2010

Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays

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R Hull

Function : Author

J Floro

Function : Author

M Gherasimova

Function : Author

J Graham

Function : Author

J. Gray

Function : Author

A. Portavoce

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

F Ross

Function : Author

J Thorp

Function : Author

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Alain Portavoce : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02394016

Submitted on : Wednesday, December 4, 2019-3:56:34 PM

Last modification on : Friday, March 24, 2023-2:53:14 PM

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hal-02394016 , version 1 (04-12-2019)

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HAL Id : hal-02394016 , version 1
DOI : 10.1088/1742-6596/209/1/012003

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R Hull, J Floro, M Gherasimova, J Graham, J. Gray, et al.. Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays. Journal of Physics: Conference Series, 2010, 209, pp.012003. ⟨10.1088/1742-6596/209/1/012003⟩. ⟨hal-02394016⟩

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Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays

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