HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

Atom redistribution during co-doped amorphous silicon crystallization

Abstract : Atom redistribution during crystallization of a B and P co-doped amorphous Si layer produced by Si and P chemical vapor co-deposition and B implantation has been investigated. The crystallization of the entire layer is quasi-instantaneous for annealing temperature greater than 650 °C. The crystallization rate is well reproduced by the Avrami-Johnson-Mehl-Kolmogorov model of transformation. The Avrami n is found equal to 4, which is corresponding to 3D bulk crystallization. Crystallization promotes a non-Fickian redistribution of B atoms, allowing for an abrupt interface between B-doped and B-undoped regions. After crystallization, B diffuses in the polycrystalline Si layer for concentrations lower than 1.5 × 10 20 at cm −3 via the type B kinetic regime. Crystallization has no significant (or detectable) influence on the P profile. For temperatures higher than 750 °C, P diffuses in the poly-Si layer towards the region of highest B concentration via the type B kinetic regime, leading to P uphill diffusion. This phenomenon can be simulated considering chemical interactions between B and P atoms in both grains and grain boundaries.
Complete list of metadata

Cited literature [47 references]  Display  Hide  Download

Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Thursday, December 12, 2019 - 11:04:55 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM
Long-term archiving on: : Friday, March 13, 2020 - 9:58:42 PM


  • HAL Id : hal-02406667, version 1



A. Portavoce, D. Mangelinck, R Simola, R Daineche, J. Bernardini. Atom redistribution during co-doped amorphous silicon crystallization. Defect and Diffusion Forum, Trans Tech Publications, 2009, 289-292, pp.329-337. ⟨hal-02406667⟩



Record views


Files downloads