U. König, M. Zeuner, G. Hock, T. Hackbarth, M. Gluck et al., Solid-State Electr, vol.43, p.1383, 1999.

N. A. Stolwijk and H. Bracht, Landolt-Bornstein-Numerical Data and Functional Relationships in Science and Technology, pp.2-3, 1998.

N. E. Cowern, P. C. Zalm, P. Van-der-sluis, D. G. Gravesteijn, and W. B. De-boer, Phys. Rev. Lett, vol.72, p.2585, 1994.

P. Kuo, J. L. Hoyt, and J. F. Gibbons, Appl. Phys. Lett, vol.66, p.580, 1995.

A. Larsen and P. Kringhoj, Appl. Phys. Lett, vol.68, p.2684, 1996.

N. R. Zangenberg, J. Fage-pedersen, J. Hansen, and A. Larsen, J. Appl. Phys, vol.94, p.3883, 2003.

P. Kringhoj, A. Larsen, and S. Y. Shirayev, Phys. Rev. Lett, vol.76, p.3372, 1996.

M. J. Aziz, Defects and Diffusion in Silicon Processing, p.37, 1997.

M. J. Aziz, Appl. Phys. Lett, vol.70, p.2810, 1997.

I. Markov, Crystal Growth for Beginners, 1995.

W. Frank, U. Gosele, H. Mehrer, and A. Seeger, Diffusion in Crystalline Solids, p.63, 1984.

. Landolt-börnstein, Diffusion in Semiconductors and Nonmetallic Solids, vol.3, 1998.

J. Philibert, Atom Movements, Diffusion and Mass Transport in Solids (Editions de Physique, 1991.

Y. Zhao, M. J. Aziz, H. Gossmann, S. Mitha, and D. Schiferl, Appl. Phys. Lett, vol.74, p.31, 1999.

Y. Zhao, M. J. Aziz, H. Gossmann, S. Mitha, and D. Schiferl, Appl. Phys. Lett, vol.75, p.941, 1999.

A. Antonelli and J. Bernholc, Phys. Rev. B, vol.40, p.10643, 1989.