Skip to Main content Skip to Navigation
Conference papers

Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells

Francois Atteia Judikaël Le Rouzo 1 Gérard Berginc 2 Jean-Jacques Simon 1 Ludovic Escoubas 1
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 Thalès Optronique
Document type :
Conference papers
Complete list of metadata
https://hal-amu.archives-ouvertes.fr/hal-02450871
Contributor : Judikaël Le Rouzo Connect in order to contact the contributor
Submitted on : Thursday, January 23, 2020 - 10:30:36 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM

Identifiers

Collections

UNIV-AMU | IM2NP | UNIV-TLN | CNRS

Citation

Francois Atteia, Judikaël Le Rouzo, Gérard Berginc, Jean-Jacques Simon, Ludovic Escoubas. Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, Feb 2019, San Francisco, France. pp.29, ⟨10.1117/12.2509326⟩. ⟨hal-02450871⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

151