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Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells

Francois Atteia Judikaël Le Rouzo 1 Gérard Berginc 2 Jean-Jacques Simon 1 Ludovic Escoubas 1
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 Thalès Optronique
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https://hal-amu.archives-ouvertes.fr/hal-02450871
Contributor : Judikaël Le Rouzo <>
Submitted on : Thursday, January 23, 2020 - 10:30:36 AM
Last modification on : Tuesday, March 30, 2021 - 3:24:04 AM

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Francois Atteia, Judikaël Le Rouzo, Gérard Berginc, Jean-Jacques Simon, Ludovic Escoubas. Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, Feb 2019, San Francisco, France. pp.29, ⟨10.1117/12.2509326⟩. ⟨hal-02450871⟩

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