Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells

Engineering Sciences [physics] Optics / Photonic Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Materials

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Submitted on : Thursday, January 23, 2020-10:30:36 AM

Last modification on : Friday, March 10, 2023-9:02:09 AM

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hal-02450871 , version 1 (23-01-2020)

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HAL Id : hal-02450871 , version 1
DOI : 10.1117/12.2509326

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Francois Atteia, Judikaël Le Rouzo, Gérard Berginc, Jean-Jacques Simon, Ludovic Escoubas. Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, Feb 2019, San Francisco, France. pp.29, ⟨10.1117/12.2509326⟩. ⟨hal-02450871⟩

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