III?V compound semiconductor transistors?from planar to nanowire structures, MRS Bulletin, vol.39, issue.8, pp.668-677, 2014. ,
Fundamentals of III-V Semiconductor MOSFETs, Fundamentals of III-V Semiconductor MOSFETs, 2010. ,
III-V Compound Semiconductors, Semiconductors: Integration with Silicon-Based Microelectronics, 2016. ,
A Self-Aligned Gate-Last Process Applied to All-III?V CMOS on Si, IEEE Electron Device Letters, vol.39, issue.7, pp.935-938, 2018. ,
Single-Event Transient Response of InGaAs MOSFETs, IEEE Transactions on Nuclear Science, vol.61, issue.6, pp.3550-3556, 2014. ,
Scaling Effects on Single-Event Transients in InGaAs FinFETs, IEEE Transactions on Nuclear Science, vol.65, issue.1, pp.296-303, 2018. ,
Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates, IEEE Transactions on Nuclear Science, vol.66, issue.1, pp.376-383, 2019. ,
A comparison of neutron-induced SEU rates in Si and GaAs devices, IEEE Transactions on Nuclear Science, vol.35, issue.6, pp.1634-1637, 1988. ,
Compound Semiconductor Integrated Circuits, 2003. ,
SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS, International Journal of High Speed Electronics and Systems, vol.14, issue.02, pp.311-325, 2004. ,
Technology assessment of Si and III-V FinFETs and III-V tunnel FETs from soft error rate perspective, 2012 International Electron Devices Meeting, pp.577-580, 2012. ,
Modeling and Simulation of Single-Event Effects in Digital Devices and ICs, IEEE Transactions on Nuclear Science, vol.55, issue.4, pp.1854-1878, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-01759437
Author Index, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol.506, issue.3, pp.329-336, 2003. ,
Author Index, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol.483, issue.3, pp.835-855, 2002. ,
Water Quality in Big Cypress National Preserve and Everglades National Park - Trends and Spatial Characteristics of Selected Constituents, SER -History, Trends and Challenges, 2004. ,
Boron compounds as a dominant source of alpha particles in semiconductor devices, 33rd IEEE International Reliability Physics Symposium, pp.297-302, 1995. ,
Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs, IEEE Transactions on Nuclear Science, vol.59, issue.6, pp.2658-2665, 2012. ,
URL : https://hal.archives-ouvertes.fr/hal-01430089
Susceptibility of Group-IV and III-V Semiconductor-based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations, Numerical Simulations, pp.117-134, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02096696
Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors, Journal of Applied Physics, vol.39, issue.4, pp.2029-2038, 1968. ,
Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground, IEEE Transactions on Nuclear Science, vol.51, issue.6, pp.3427-3434, 2004. ,
ENDF/B-VII.1 Nuclear Data for Science and Technology: Cross Sections, Covariances, Fission Product Yields and Decay Data, Nuclear Data Sheets, vol.112, pp.2887-2996, 2011. ,
The TENDL library: hope, reality and future, proceedings of the International Conference on Nuclear Data for Science and Technology, 2016. ,
Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories, Applied Physics Letters, vol.93, issue.6, p.064105, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-01630029
Cosmic-Ray Neutrons on the Ground and in the Atmosphere, MRS Bulletin, vol.28, issue.2, pp.131-135, 2003. ,
Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate, IEEE Transactions on Nuclear Science, vol.59, issue.4, pp.714-722, 2012. ,
URL : https://hal.archives-ouvertes.fr/hal-01430091
Soft Errors, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-02107670
Los Alamos National Laboratory 1995 self assessment report, 1995. ,
Soft Error Rate Improvements in 14-nm Technology Featuring Second-Generation 3D Tri-Gate Transistors, IEEE Transactions on Nuclear Science, vol.62, issue.6, pp.2570-2577, 2015. ,