CMOS-compatible all-dielectric metalens for improving pixel photodetector arrays

E Mikheeva (1) , J.-B Claude (1) , M Salomoni (2) , Jérôme Wenger (1) , Julien Lumeau (1) , R. Abdeddaim (1) , A Ficorella (3) , A Gola (3) , G Paternoster (3) , M. Paganoni (2) , E. Auffray (4) , P Lecoq (4) , S Enoch (1)

1 FRESNEL - Institut FRESNEL
2 UNIMIB - Università degli Studi di Milano-Bicocca = University of Milano-Bicocca
3 FBK - Fondazione Bruno Kessler [Trento, Italy]
4 CERN - European Organization for Nuclear Research

Metasurfaces and, in particular, metalenses have attracted large interest and enabled various applications in the near-infrared and THz regions of the spectrum. However, metalens design in the visible range stays quite challenging due to the smaller nanostructuring scale and the limited choice of lossless CMOS-compatible materials. We develop a simple, yet efficient design of a polarization-independent, broadband metalens suitable for many CMOS-compatible fabrication techniques and materials and implement it for the visible spectral range using niobium pentoxide Nb 2 O 5. The produced metalens demonstrates high transmittance and focusing ability as well as large depth of focus which makes it a promising solution for a new generation of silicon photomultiplier photodetectors with reduced fill factor impact on the performance and reduced electron-hole generation region, which altogether potentially leads to improved photodetection efficiency and other characteristics.

Domaines: Optique / photonique

E Mikheeva, J.-B Claude, M Salomoni, Jérôme Wenger, Julien Lumeau, et al.. CMOS-compatible all-dielectric metalens for improving pixel photodetector arrays. APL Photonics, 2020, 27 (18), pp.26060-26069. ⟨10.1063/5.0022162⟩. ⟨hal-02995978⟩