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CMOS-compatible all-dielectric metalens for improving pixel photodetector arrays

Abstract : Metasurfaces and, in particular, metalenses have attracted large interest and enabled various applications in the near-infrared and THz regions of the spectrum. However, metalens design in the visible range stays quite challenging due to the smaller nanostructuring scale and the limited choice of lossless CMOS-compatible materials. We develop a simple, yet efficient design of a polarization-independent, broadband metalens suitable for many CMOS-compatible fabrication techniques and materials and implement it for the visible spectral range using niobium pentoxide Nb 2 O 5. The produced metalens demonstrates high transmittance and focusing ability as well as large depth of focus which makes it a promising solution for a new generation of silicon photomultiplier photodetectors with reduced fill factor impact on the performance and reduced electron-hole generation region, which altogether potentially leads to improved photodetection efficiency and other characteristics.
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Contributor : Julien Lumeau Connect in order to contact the contributor
Submitted on : Monday, November 9, 2020 - 2:11:15 PM
Last modification on : Tuesday, October 19, 2021 - 10:59:44 PM
Long-term archiving on: : Wednesday, February 10, 2021 - 7:03:37 PM


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  • HAL Id : hal-02995978, version 1



E Mikheeva, J.-B Claude, M Salomoni, Jérôme Wenger, Julien Lumeau, et al.. CMOS-compatible all-dielectric metalens for improving pixel photodetector arrays. APL Photonics, AIP Publishing LLC, 2020, 27 (18), pp.26060-26069. ⟨hal-02995978⟩



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