Skip to Main content Skip to Navigation
Book sections

Interactions between Terrestrial Cosmic-Ray Neutrons and III-V Compound Semiconductors

Abstract : This work explores by numerical simulation the impact of high-energy atmospheric neutrons and their interactions with III–V binary compound semiconductors. The efforts have focused on eight III–V semiconductors: GaAs, AlAs, InP, InAs, GaSb, InSb, GaN, and GaP. For each material, extensive Geant4 numerical simulations have been performed considering a bulk target exposed to a neutron source emulating the atmospheric neutron spectrum at terrestrial level. Results emphasize in detail the reaction rates per type of reaction (elastic, inelastic, nonelastic) and offer a classification of all the neutron-induced secondary products as a function of their atomic number, kinetic energy, initial stopping power, and range. Implications for single-event effects (SEEs) are analyzed and discussed, notably in terms of energy and charge deposited in the bulk material and in the first nanometers of particle range with respect to the critical charge for modern complementary metal oxide semiconductor (CMOS) technologies.
Complete list of metadata

Cited literature [27 references]  Display  Hide  Download
Contributor : Daniela Munteanu Connect in order to contact the contributor
Submitted on : Wednesday, November 11, 2020 - 10:08:58 AM
Last modification on : Wednesday, November 3, 2021 - 7:27:46 AM
Long-term archiving on: : Friday, February 12, 2021 - 6:16:20 PM


Files produced by the author(s)


Distributed under a Creative Commons Attribution 4.0 International License




Daniela Munteanu, Jean-Luc Autran. Interactions between Terrestrial Cosmic-Ray Neutrons and III-V Compound Semiconductors. Modeling and Simulation in Engineering, 2020, 978-953-51-0012-6. ⟨10.5772/intechopen.92774⟩. ⟨hal-02998364⟩



Record views


Files downloads