Monolithic Integration of III -V on silicon for photonic and electronic applications, pp.1-2, 2018. ,
, Fundamentals of III-V Semiconductor MOSFETs, 2010.
, Semiconductors: Integration with Silicon-Based Microelectronics, 2016.
A Self-Aligned Gate-Last Process Applied to All-III-V CMOS on Si, IEEE Electron Device Letters, vol.39, issue.7, pp.935-938, 2018. ,
Single-Event Transient Response of InGaAs MOSFETs, IEEE Transactions on Nuclear Science, vol.61, issue.6, pp.3550-3556, 2014. ,
Scaling Effects on Single-Event Transients in InGaAs FinFETs, IEEE Transactions on Nuclear Science, vol.65, issue.1, pp.296-303, 2018. ,
Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates, IEEE Transactions on Nuclear Science, vol.66, issue.1, pp.376-383, 2019. ,
A comparison of neutron-induced SEU rates in Si and GaAs devices, IEEE Transactions on Nuclear Science, vol.35, issue.6, pp.1634-1637, 1988. ,
Compound Semiconductor Integrated Circuits, 2003. ,
Single-event effects in III-V semiconductor electronics, International Journal of High-Speed Electronics and Systems, vol.14, issue.2, pp.311-325, 2004. ,
Tunnel FETs from Soft Error Rate Perspective, International Electron Device Meeting, pp.577-580, 2012. ,
Modeling and simulation of single-event effects in digital devices and ICs, IEEE Transactions on Nuclear Science, vol.55, issue.4, pp.1854-1878, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-01759437
Susceptibility of Group-IV and III-V Semiconductorbased Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations, Numerical Simulations, Numerical Simulations in Engineering and Science, Srinivas P. Rao, IntechOpen, pp.234-255, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-02096696
Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors, IEEE Transactions on Nuclear Science, 2020. ,
URL : https://hal.archives-ouvertes.fr/hal-02473107
Geant4 -a simulation toolkit, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol.506, issue.3, pp.250-303, 2003. ,
URL : https://hal.archives-ouvertes.fr/in2p3-00020246
Recent developments in Geant4, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol.835, pp.186-225, 2016. ,
URL : https://hal.archives-ouvertes.fr/in2p3-01412626
Soft Errors: from particles to circuits, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-02107670
Springer Handbook of Electronic and Photonic Materials, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-02020292
Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors, Journal of Applied Physics, vol.39, pp.2029-2038, 1968. ,
Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate, IEEE Transactions on Nuclear Science, vol.59, issue.4, pp.714-722, 2012. ,
URL : https://hal.archives-ouvertes.fr/hal-01430091
Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs, IEEE Transactions on Nuclear Science, vol.59, issue.6, pp.2658-2665, 2012. ,
URL : https://hal.archives-ouvertes.fr/hal-01430089
Measurement of the Flux and Energy Spectrum of Cosmic-Ray Induced Neutrons on the Ground, IEEE Transactions on Nuclear Science, vol.51, pp.3427-3434, 2004. ,
Cosmic-Ray Neutrons on the Ground and in the Atmosphere, MRS Bulletin, vol.28, issue.2, pp.131-135, 2003. ,
Neutron Interactions with Matter, 1991. ,
ENDF/B-VII.1 Nuclear Data for Science and Technology: Cross Sections, Covariances, Fission Product Yields and Decay Data, Nuclear Data Sheets, vol.112, pp.2887-2996, 2011. ,
SRIM -The Stopping and Range of Ions in Matter, 2008. ,
Soft Error Rate Improvements in 14-nm Technology Featuring Second-Generation 3D Tri-Gate Transistors, IEEE Transactions on Nuclear Science, vol.62, issue.6, pp.2570-2577, 2012. ,