S. Mauthe, Monolithic Integration of III -V on silicon for photonic and electronic applications, pp.1-2, 2018.

S. Oktyabrsky and P. Ye, Fundamentals of III-V Semiconductor MOSFETs, 2010.

T. Li, M. Mastro, A. Dadgar, and I. Compound, Semiconductors: Integration with Silicon-Based Microelectronics, 2016.

A. A. Jönsson, J. Svensson, and L. Wernersson, A Self-Aligned Gate-Last Process Applied to All-III-V CMOS on Si, IEEE Electron Device Letters, vol.39, issue.7, pp.935-938, 2018.

K. Ni, Single-Event Transient Response of InGaAs MOSFETs, IEEE Transactions on Nuclear Science, vol.61, issue.6, pp.3550-3556, 2014.

H. Gong, Scaling Effects on Single-Event Transients in InGaAs FinFETs, IEEE Transactions on Nuclear Science, vol.65, issue.1, pp.296-303, 2018.

H. Gong, Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates, IEEE Transactions on Nuclear Science, vol.66, issue.1, pp.376-383, 2019.

C. H. Tsao, R. Silberberg, and J. R. Letaw, A comparison of neutron-induced SEU rates in Si and GaAs devices, IEEE Transactions on Nuclear Science, vol.35, issue.6, pp.1634-1637, 1988.

T. T. Vu, Compound Semiconductor Integrated Circuits, 2003.

D. Mcmorrow, J. S. Melinger, and A. R. Knudson, Single-event effects in III-V semiconductor electronics, International Journal of High-Speed Electronics and Systems, vol.14, issue.2, pp.311-325, 2004.

H. Liu, M. Cotter, S. Datta, V. Narayanan, . Vtechnology-assessment et al., Tunnel FETs from Soft Error Rate Perspective, International Electron Device Meeting, pp.577-580, 2012.

D. Munteanu and J. L. Autran, Modeling and simulation of single-event effects in digital devices and ICs, IEEE Transactions on Nuclear Science, vol.55, issue.4, pp.1854-1878, 2008.
URL : https://hal.archives-ouvertes.fr/hal-01759437

D. Munteanu and J. L. Autran, Susceptibility of Group-IV and III-V Semiconductorbased Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations, Numerical Simulations, Numerical Simulations in Engineering and Science, Srinivas P. Rao, IntechOpen, pp.234-255, 2017.
URL : https://hal.archives-ouvertes.fr/hal-02096696

J. L. Autran and D. Munteanu, Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors, IEEE Transactions on Nuclear Science, 2020.
URL : https://hal.archives-ouvertes.fr/hal-02473107

S. Agostinelli, Geant4 -a simulation toolkit, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol.506, issue.3, pp.250-303, 2003.
URL : https://hal.archives-ouvertes.fr/in2p3-00020246

J. Allison, K. Amako, J. Apostolakis, P. Arce, and M. Asai, Recent developments in Geant4, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol.835, pp.186-225, 2016.
URL : https://hal.archives-ouvertes.fr/in2p3-01412626

J. L. Autran and D. Munteanu, Soft Errors: from particles to circuits, 2015.
URL : https://hal.archives-ouvertes.fr/hal-02107670

S. Kasap and P. Capper, Springer Handbook of Electronic and Photonic Materials, 2017.
URL : https://hal.archives-ouvertes.fr/hal-02020292

C. A. Klein, Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors, Journal of Applied Physics, vol.39, pp.2029-2038, 1968.

S. Serre, S. Semikh, S. Uznanski, J. L. Autran, D. Munteanu et al., Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate, IEEE Transactions on Nuclear Science, vol.59, issue.4, pp.714-722, 2012.
URL : https://hal.archives-ouvertes.fr/hal-01430091

J. L. Autran, S. Serre, S. Semikh, D. Munteanu, G. Gasiot et al., Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs, IEEE Transactions on Nuclear Science, vol.59, issue.6, pp.2658-2665, 2012.
URL : https://hal.archives-ouvertes.fr/hal-01430089

M. S. Gordon, Measurement of the Flux and Energy Spectrum of Cosmic-Ray Induced Neutrons on the Ground, IEEE Transactions on Nuclear Science, vol.51, pp.3427-3434, 2004.

P. Goldhagen, Cosmic-Ray Neutrons on the Ground and in the Atmosphere, MRS Bulletin, vol.28, issue.2, pp.131-135, 2003.

P. Rinard, Neutron Interactions with Matter, 1991.

M. B. Chadwick, ENDF/B-VII.1 Nuclear Data for Science and Technology: Cross Sections, Covariances, Fission Product Yields and Decay Data, Nuclear Data Sheets, vol.112, pp.2887-2996, 2011.

J. F. Ziegler, J. P. Biersack, and M. D. Ziegler, SRIM -The Stopping and Range of Ions in Matter, 2008.

N. Seifert, S. Jahinuzzaman, J. Velamala, R. Ascazubi, N. Patel et al., Soft Error Rate Improvements in 14-nm Technology Featuring Second-Generation 3D Tri-Gate Transistors, IEEE Transactions on Nuclear Science, vol.62, issue.6, pp.2570-2577, 2012.