Dominique Vuillaume, Alain Bravaix. Charging and discharging properties of electron traps created by hot-carrier injections in gate oxide of n-channel metal oxide semiconductor field effect transistor.
Journal of Applied Physics, American Institute of Physics, 1993, Journal of Applied Physics, 73 (5),
⟨10.1063/1.353065⟩.
⟨hal-03022904⟩