Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation - Archive ouverte HAL Access content directly
Journal Articles Microelectronic Engineering Year : 1997

Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation

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Alain Bravaix
  • Function : Author
  • PersonId : 1041446
D. Goguenheim
  • Function : Author
N. Revil
  • Function : Author
M. Varrot
  • Function : Author
P. Mortini
  • Function : Author

Abstract

New degradation mechanisms are found during AC pass transistor operation combined with charge-pumping analysis in thin gate-oxide p-MOSFET's. The electron trapping is clearly saturating and in some cases can be completely suppressed by the subsequent detrapping phases leading to the strong influence of donor type interface traps alone, as no positive oxide charge is detected in a moderate field range. These influences reduce the transistor performances as in the case of n-MOSFET's and become more pronounced in 7nm gate-oxide, showing a large dependence with the propagation delay. This is partly due to the low sensitivity to the negative trapped charge with respect to the increasing proportion of the detrapped charge and of generated interface traps in 7nm gate-oxide surface-channel p-MOSFET's.

Dates and versions

hal-03023046 , version 1 (25-11-2020)

Identifiers

Cite

Alain Bravaix, D. Goguenheim, D. Vuillaume, N. Revil, M. Varrot, et al.. Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation. Microelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.305-308. ⟨10.1016/S0167-9317(97)00069-5⟩. ⟨hal-03023046⟩
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