Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Baptiste Berenguier (1) , Olivier Palais (1) , Sylvain Bertaina (1) , Laurent Ottaviani (1) , A. Lyoussi (2)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 CEA Cadarache

During the past years, our team developed an original lifetime measurement method for semiconductors wafers, called microwave phase-shift (µW-PS). It was successfully employed to determinate bulk lifetime and surface recombination velocities on silicon. We recently adapted the method to silicon carbide (SiC), using a continuous UV laser and acousto-optic modulator. The theory is presented, using the standard continuity equation in n-type 4H-SiC. The proposed measurement setup firstly allows to estimate a bulk lifetime ranging from 2.3 to 6.7 µs.

Domaines: Physique [physics]

Baptiste Berenguier, Olivier Palais, Sylvain Bertaina, Laurent Ottaviani, A. Lyoussi. Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift. Materials Science Forum, 2016, 858, pp.337-340. ⟨10.4028/www.scientific.net/MSF.858.337⟩. ⟨hal-03350123⟩