Simple Method for Phosphorus Diffusion on <100> Oriented P-Type Silicon Using New Phosphorus Gel as Dopant

D. Kobor; R. Ndioukane; O. Palais; M. Touré; A. Diallo; N. Fall; M. Biagui

doi:10.5539/apr.v7n2p49

Journal Articles Applied Physics Research Year : 2015

Simple Method for Phosphorus Diffusion on <100> Oriented P-Type Silicon Using New Phosphorus Gel as Dopant

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D. Kobor

Function : Author

R. Ndioukane

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O. Palais

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Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

M. Touré

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A. Diallo

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N. Fall

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M. Biagui

Function : Author

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Physics [physics]

Olivier Palais : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-03350129

Submitted on : Tuesday, September 21, 2021-10:30:34 AM

Last modification on : Friday, March 24, 2023-2:53:22 PM

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hal-03350129 , version 1 (21-09-2021)

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HAL Id : hal-03350129 , version 1
DOI : 10.5539/apr.v7n2p49

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D. Kobor, R. Ndioukane, O. Palais, M. Touré, A. Diallo, et al.. Simple Method for Phosphorus Diffusion on <100> Oriented P-Type Silicon Using New Phosphorus Gel as Dopant. Applied Physics Research, 2015, 7 (2), ⟨10.5539/apr.v7n2p49⟩. ⟨hal-03350129⟩

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Simple Method for Phosphorus Diffusion on <100> Oriented P-Type Silicon Using New Phosphorus Gel as Dopant

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