Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations

Stéphane Biondo; Wilfried Vervisch; Laurent Ottaviani; Olivier Palais

doi:10.1063/1.3676284

Journal Articles Journal of Applied Physics Year : 2012

Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations

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1

Stéphane Biondo

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Wilfried Vervisch

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Laurent Ottaviani

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Olivier Palais

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Physics [physics]

Olivier Palais : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-03350206

Submitted on : Tuesday, September 21, 2021-10:40:21 AM

Last modification on : Friday, March 24, 2023-2:53:22 PM

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hal-03350206 , version 1 (21-09-2021)

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HAL Id : hal-03350206 , version 1
DOI : 10.1063/1.3676284

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Stéphane Biondo, Wilfried Vervisch, Laurent Ottaviani, Olivier Palais. Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations. Journal of Applied Physics, 2012, 111 (2), pp.024506. ⟨10.1063/1.3676284⟩. ⟨hal-03350206⟩

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Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations

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