Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

Laurent Ottaviani (1) , Stéphane Biondo (1) , Michel Kazan (1) , Olivier Palais (1) , Julian Duchaine , Frédéric Milesi , Rachid Daineche , Blandine Courtois , Frank Torregrosa

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

This paper focuses on the formation of thin n+p junctions in p-type Silicon Carbide (SiC) epitaxial layers using two kinds of Nitrogen implantations. The standard beam ion implantations and PULSIONTM processes were performed at two distinct energies (700 eV and 7 keV), and the subsequent annealing was held at 1600°C in a resistive furnace specifically adapted to SiC material. No measurable electrical activity was obtained for both implantations performed at 700 eV, due to some outdiffusion of N dopants during the annealing despite a low surface roughness (rms ~ 1.4 nm) and no residual damage detected by RBS/C. A higher sheet resistance was measured in plasma-implanted samples at 7 keV (in comparison with beam-line implanted samples), which is partly related to N outdiffusion. The profiles of N atoms beam-implanted at 7 keV are not affected by the annealing. The corresponding electrical activation is fully completed.

Domains: Physics [physics]

Laurent Ottaviani, Stéphane Biondo, Michel Kazan, Olivier Palais, Julian Duchaine, et al.. Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes. Advanced Materials Research, 2011, 324, pp.265-268. ⟨10.4028/www.scientific.net/AMR.324.265⟩. ⟨hal-03350220⟩