Laurent Ottaviani, Stéphane Biondo, Michel Kazan, Olivier Palais, Julian Duchaine, et al.. Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes.
Advanced Materials Research, Trans Tech Publications, 2011, 324, pp.265-268.
⟨10.4028/www.scientific.net/AMR.324.265⟩.
⟨hal-03350220⟩