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Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method

Stéphane Biondo Wilfried Vervisch Laurent Ottaviani 1 Olivier Palais 1
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
Abstract : This paper focuses on UV-photodetector simulation. The calculus method description and the physical equations which occur in this model are presented as well as the UV-photodetector structure (p+n--n+ diode). Based on the Finite Element Method the electrical part solves the continuity and Poisson equation, and the optical part solves by Maxwell’s equation, FDTD [1]. Simulation works point out the influence of the p+-type layer on the electrical characteristics such as the current densities versus reverse bias. Indeed, simulation results show the current density increase with the decrease doping concentration or the p+-type layer thickness.
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https://hal-amu.archives-ouvertes.fr/hal-03350223
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Submitted on : Tuesday, September 21, 2021 - 10:49:40 AM
Last modification on : Tuesday, October 19, 2021 - 10:50:07 PM

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UNIV-AMU | IM2NP | UNIV-TLN | CNRS

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Stéphane Biondo, Wilfried Vervisch, Laurent Ottaviani, Olivier Palais. Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method. Materials Science Forum, Trans Tech Publications Inc., 2011, 679-680, pp.563-566. ⟨10.4028/www.scientific.net/MSF.679-680.563⟩. ⟨hal-03350223⟩

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