Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method

Stéphane Biondo , Wilfried Vervisch , Laurent Ottaviani (1) , Olivier Palais (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

This paper focuses on UV-photodetector simulation. The calculus method description and the physical equations which occur in this model are presented as well as the UV-photodetector structure (p+n--n+ diode). Based on the Finite Element Method the electrical part solves the continuity and Poisson equation, and the optical part solves by Maxwell’s equation, FDTD [1]. Simulation works point out the influence of the p+-type layer on the electrical characteristics such as the current densities versus reverse bias. Indeed, simulation results show the current density increase with the decrease doping concentration or the p+-type layer thickness.

Domaines: Physique [physics]

Stéphane Biondo, Wilfried Vervisch, Laurent Ottaviani, Olivier Palais. Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method. Materials Science Forum, 2011, 679-680, pp.563-566. ⟨10.4028/www.scientific.net/MSF.679-680.563⟩. ⟨hal-03350223⟩