Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples

Laurent Ottaviani (1) , Stéphane Biondo , Stéphane Morata , Olivier Palais (1) , Thierry Sauvage , Frank Torregrosa (2)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 IBS - Ion Beam Services

We report on topographical, structural and electrical measurements of aluminum-implanted and annealed 4H-SiC epitaxial samples. The influence of heating-up and cooling-down temperature rates on the SiC surface roughness, the crystal volume reordering and the dopant electrical activation was particularly studied. A higher heating-rate was found to preserve the rms roughness for annealing temperatures lower than 1700°C, and to improve the sheet resistance whatever the annealing temperature due to a better dopant activation (except for 1600°C process, which induced a dark zone in the sample volume). A complete activation was calculated for an annealing at 1700°C during 30 minutes, with a ramp-up at 20°C/s. Rising the cooling-down rate appeared to increase the sheet resistance, probably due to a higher concentration of point defects in the implanted layer.

Domaines: Physique [physics]

Laurent Ottaviani, Stéphane Biondo, Stéphane Morata, Olivier Palais, Thierry Sauvage, et al.. Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples. Materials Science Forum, 2010, 645-648, pp.717-720. ⟨10.4028/www.scientific.net/MSF.645-648.717⟩. ⟨hal-03350236⟩