Journal articles
N-type multicrystalline silicon wafers and rear junction solar cells
Abstract : N-type silicon presents several advantages compared to p-type material, among them, the most important is the small capture cross sections of metallic impurities, which are neatly smaller. As a consequence lifetime and also diffusion length of minority carriers should be neatly higher in n-type than in p-type, for a given impurity concentration. This is of a paramount interest for multicrystalline silicon wafers, in which the impurity-extended crystallographic defects interaction governs the recombination strength of minority carriers. It is experimentally verified that in 1.2 cm raw wafers lifetimes about 200 s and diffusion lengths around 220 m are measured. These values increase strongly after gettering treatments like phosphorus diffusion or Al-Si alloying. Scan maps reveal that extended defects are poorly active, although in regions where the density of dislocations is higher than 106 cm-2. Abrupt junctions are obtained by Al-Si alloying after annealing between 850 and 900 °C, which could be used for rear junction cells. Such cells can be processed by means of similar processing steps used to make conventional p-type base cells.
https://hal-amu.archives-ouvertes.fr/hal-03350281
Contributor : Olivier Palais Connect in order to contact the contributor
Submitted on : Wednesday, September 22, 2021 - 8:46:29 AM
Last modification on : Tuesday, October 19, 2021 - 10:50:07 PM
Long-term archiving on: : Thursday, December 23, 2021 - 6:19:32 PM
Contributor : Olivier Palais Connect in order to contact the contributor
Submitted on : Wednesday, September 22, 2021 - 8:46:29 AM
Last modification on : Tuesday, October 19, 2021 - 10:50:07 PM
Long-term archiving on: : Thursday, December 23, 2021 - 6:19:32 PM
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