Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps

P Hidalgo; O Palais; S Martinuzzi

doi:10.1088/0953-8984/16/2/003

Journal Articles Journal of Physics: Condensed Matter Year : 2004

Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps

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1

P Hidalgo

Function : Author

O Palais

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

S Martinuzzi

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Physics [physics]

Olivier Palais : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-03350292

Submitted on : Tuesday, September 21, 2021-11:12:01 AM

Last modification on : Wednesday, February 8, 2023-5:11:19 PM

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hal-03350292 , version 1 (21-09-2021)

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HAL Id : hal-03350292 , version 1
DOI : 10.1088/0953-8984/16/2/003

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P Hidalgo, O Palais, S Martinuzzi. Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps. Journal of Physics: Condensed Matter, 2004, 16 (2), pp.S19-S24. ⟨10.1088/0953-8984/16/2/003⟩. ⟨hal-03350292⟩

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Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps

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