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Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons

Abstract

Germanium is potentially candidate to replace silicon in ultra-scaled transistors. This work analyses the radiation response of germanium in thin layer subjected to atmospheric neutrons and quantifies the underlying mechanisms potentially responsible of single event effects in Ge-based advanced CMOS technologies. Reliability assessments for Ge-based nanoelectronics are reported for technological nodes ranging from 180 nm to 14 nm.
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Dates and versions

hal-03358407 , version 1 (29-09-2021)

Identifiers

  • HAL Id : hal-03358407 , version 1

Cite

Daniela Munteanu, Jean-Luc Autran. Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Oct 2021, Bordeaux, France. ⟨hal-03358407⟩
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