Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons

Abstract : Germanium is potentially candidate to replace silicon in ultra-scaled transistors. This work analyses the radiation response of germanium in thin layer subjected to atmospheric neutrons and quantifies the underlying mechanisms potentially responsible of single event effects in Ge-based advanced CMOS technologies. Reliability assessments for Ge-based nanoelectronics are reported for technological nodes ranging from 180 nm to 14 nm.