Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons

Daniela Munteanu (1) , Jean-Luc Autran (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Germanium is potentially candidate to replace silicon in ultra-scaled transistors. This work analyses the radiation response of germanium in thin layer subjected to atmospheric neutrons and quantifies the underlying mechanisms potentially responsible of single event effects in Ge-based advanced CMOS technologies. Reliability assessments for Ge-based nanoelectronics are reported for technological nodes ranging from 180 nm to 14 nm.

Domaines: Micro et nanotechnologies/Microélectronique

Daniela Munteanu, Jean-Luc Autran. Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Oct 2021, Bordeaux, France. ⟨hal-03358407⟩