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Morphologies and optical properties of black silicon by room temperature reactive ion etching

Abstract : Black Silicon (BS) nanostructures fabricated by Reactive Ion Etching at Room Temperature (RT-RIE) are presented. We discuss the influence of the plasma process parameters on the silicon etching and their influence on the shape of the nanostructures constituting the BS. Furthermore, we study-both experimentally and using modeling by finite difference time domain (FDTD) method-how to increase absorptance in the visible and NIR regions using light trapping effect based on a fine control of the BS morphology. Absorptance higher than 99 % is reached with a strong angular acceptance. This paper proposes an optimized process to fabricate high aspect ratio and high absorptance BS using a room temperature process.
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Contributor : Judikaël Le Rouzo Connect in order to contact the contributor
Submitted on : Wednesday, February 9, 2022 - 2:12:50 PM
Last modification on : Thursday, February 10, 2022 - 3:34:52 AM

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François Atteia, Judikaël Le Rouzo, Lou Denaix, David Duché, Gérard Berginc, et al.. Morphologies and optical properties of black silicon by room temperature reactive ion etching. Materials Research Bulletin, Elsevier, 2020, 131, ⟨10.1016/j.materresbull.2020.110973⟩. ⟨hal-03428248⟩

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