Fabrication of MIS photodetector with Ge nanocrystals grown by MBE

M. Aouassa; R. M’gaieth; B. Azeza; I. Berbezier; L. Favre

doi:10.1007/s10854-021-06237-2

Journal Articles Journal of Materials Science: Materials in Electronics Year : 2021

Fabrication of MIS photodetector with Ge nanocrystals grown by MBE

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M. Aouassa

Function : Author

R. M’gaieth

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B. Azeza

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I. Berbezier

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

L. Favre

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Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Physics [physics]

Isabelle Berbezier : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-03604796

Submitted on : Thursday, March 10, 2022-4:04:57 PM

Last modification on : Wednesday, February 8, 2023-5:11:23 PM

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hal-03604796 , version 1 (10-03-2022)

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HAL Id : hal-03604796 , version 1
DOI : 10.1007/s10854-021-06237-2

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M. Aouassa, R. M’gaieth, B. Azeza, I. Berbezier, L. Favre. Fabrication of MIS photodetector with Ge nanocrystals grown by MBE. Journal of Materials Science: Materials in Electronics, 2021, 32 (12), pp.16800-16810. ⟨10.1007/s10854-021-06237-2⟩. ⟨hal-03604796⟩

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Fabrication of MIS photodetector with Ge nanocrystals grown by MBE

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