Radiation Response of Group-IV and III-V Semiconductors Subjected to D-D and D-T Fusion Neutrons

Jean-Luc Autran (1) , Daniela Munteanu (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

This work focuses on the radiation response of Group IV (Si, Ge, SiC, diamond) and III-V (GaAs, GaN, GaP, GaSb, InAs, InP, InSb, AlAs) semiconductors subjected to D-D (2.45 MeV) and D-T (14 MeV) neutrons. The response of each material has been systematically investigated through a direct calculation using nuclear cross-section libraries, MCNP6, and Geant4 numerical simulations. For the semiconductor materials considered, we have investigated in detail the reaction rates per type of reaction (elastic, inelastic, and nonelastic) and proposed an exhaustive classification and counting of all the neutron-induced events and secondary products as a function of their nature and energy. Several metrics for quantifying the susceptibility of the related semiconductor-based electronics to neutron fusions have been finally considered and discussed.

Mots clés: radiation effects; III-V compound semiconductors; fusion neutrons; D-D reaction; D-T reaction; numerical simulation; neutron cross section; elastic scattering; inelastic scattering; nonelastic interactions; nuclear data library; Geant4; MCNP; single-event effect

Domaines: Micro et nanotechnologies/Microélectronique

Jean-Luc Autran, Daniela Munteanu. Radiation Response of Group-IV and III-V Semiconductors Subjected to D-D and D-T Fusion Neutrons. New Advances in Semiconductors, IntechOpen, 2022, ⟨10.5772/intechopen.103047⟩. ⟨hal-03695354⟩