Embedded measurement of the SET switching time of RRAM memory cells - Aix-Marseille Université Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Embedded measurement of the SET switching time of RRAM memory cells

Résumé

This paper presents an embedded measurement circuit dedicated to the extraction of the SET switching time of RRAM memory cells. A brief overview of the measurement circuit, designed in a hybrid 130nm technology with HfO2 BEoL RRAMs, is given with emphasis on the write termination (WT) mechanism and the switching time acquisition thanks to a Time-to-Digital Converter (TDC) shift and capture mechanism. The experimental test setup and test conditions are then described, including automated measurement script. Following our test procedure, we are able to extract the measured RRAM resistance values and the associated SET switching times, using a de-embedding process. Resistances and SET switching time values fully complies with the ones obtained in the literature through heavy waveguide measurement setups, validating our approach.
Fichier principal
Vignette du fichier
ICMTS2022_Paper_VA.pdf (1.65 Mo) Télécharger le fichier

Dates et versions

hal-03971049 , version 1 (02-03-2023)

Identifiants

Citer

F. Jebali, E. Muhr, M. Alayan, M.C. Faye, D. Querlioz, et al.. Embedded measurement of the SET switching time of RRAM memory cells. 34 TH INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), Mar 2022, Online, France. pp.1-5, ⟨10.1109/ICMTS50340.2022.9898162⟩. ⟨hal-03971049⟩
29 Consultations
55 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More