Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits

Jean-Luc Autran (1) , Daniela Munteanu (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

The exponential dependence of the soft-error rate (SER) with critical charge in CMOS circuits, empirically proposed by Hazucha and Svensson, is derived in the framework of the diffusion-collection approach. A full analytical formulation is established, linking the SER with physical and technological parameters, notably the circuit supply voltage, carrier diffusion coefficient and ion characteristics.

Mots clés: CMOS technologies; collection–diffusion; criti- cal charge; fin field-effect transistor (FinFET); numerical simula- tion; planar transistor; radiation effects; single event effects; soft error rate (SER); static random access memory (SRAM)

Domaines: Micro et nanotechnologies/Microélectronique

Jean-Luc Autran, Daniela Munteanu. Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits. IEEE Transactions on Nuclear Science, 2023, 70 (5), pp.782-791. ⟨10.1109/TNS.2023.3263106⟩. ⟨hal-04059844⟩