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Dislocation-free axial InAs-on-GaAs nanowires on silicon

D. V. Beznasyuk 1 Eric Robin 2 Martien den Hertog 3 Julien Claudon 4 Moïra Hocevar 1 
2 LEMMA - Laboratoire d'Etude des Matériaux par Microscopie Avancée
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
4 NPSC - Nanophysique et Semiconducteurs
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
Abstract : We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure wurtzite crystal structure. Then, we developed a two-step growth procedure to enhance the yield of vertical InAs-on-GaAs nanowires. We achieved 90% of straight InAs-on-GaAs nanowires by further optimizing the growth parameters. We investigated the composition change at the interface by energy dispersive X-ray spectroscopy and the nanowire crystal structure by transmission electron microscopy. The nominal composition of the InAs segment is found to be InxGa1-xAs with x=0.85 and corresponds to 6% of lattice mismatch with GaAs. Strain mapping performed by the geometrical phase analysis of high-resolution images revealed a dislocation-free GaAs/In0.85Ga0.15As interface. In conclusion, we successfully fabricated highly mismatched heterostructures, confirming the prediction that axial GaAs/In0.85Ga0.15As interfaces are pseudomorphic in nanowires below 40 nm diameter.
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https://hal.archives-ouvertes.fr/hal-01555564
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Submitted on : Wednesday, May 25, 2022 - 10:48:29 AM
Last modification on : Tuesday, May 31, 2022 - 3:05:14 PM

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D. V. Beznasyuk, Eric Robin, Martien den Hertog, Julien Claudon, Moïra Hocevar. Dislocation-free axial InAs-on-GaAs nanowires on silicon. Nanotechnology, Institute of Physics, 2017, 28 (36), pp.365602. ⟨10.1088/1361-6528/aa7d40⟩. ⟨hal-01555564⟩

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