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Wafering of ultra-thin silicon substrates by MeV hydrogen implantation: effects of fluence and energy

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https://hal-amu.archives-ouvertes.fr/hal-01452436
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Submitted on : Wednesday, February 1, 2017 - 9:46:11 PM
Last modification on : Tuesday, January 4, 2022 - 1:50:02 PM

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  • HAL Id : hal-01452436, version 1

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P.S. Pokam Kuisseu, T. Pingault, E. Ntsoenzok, G. Regula, F. Mazen, et al.. Wafering of ultra-thin silicon substrates by MeV hydrogen implantation: effects of fluence and energy. Spring E-MRS Conference, May 2016, Lille, France. ⟨hal-01452436⟩

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