Wafering of ultra-thin silicon substrates by MeV hydrogen implantation: effects of fluence and energy

P.S. Pokam Kuisseu; T. Pingault; E. Ntsoenzok; G. Regula; F. Mazen; A. Sauldubois; Caroline Andreazza

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Wafering of ultra-thin silicon substrates by MeV hydrogen implantation: effects of fluence and energy

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1

P.S. Pokam Kuisseu

Function : Author

T. Pingault

Function : Author

E. Ntsoenzok

Function : Author

G. Regula

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Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

F. Mazen

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A. Sauldubois

Function : Author

Caroline Andreazza

Function : Author

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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https://hal-amu.archives-ouvertes.fr/hal-01452436

Submitted on : Wednesday, February 1, 2017-9:46:11 PM

Last modification on : Friday, March 24, 2023-2:53:03 PM

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hal-01452436 , version 1 (01-02-2017)

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HAL Id : hal-01452436 , version 1

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P.S. Pokam Kuisseu, T. Pingault, E. Ntsoenzok, G. Regula, F. Mazen, et al.. Wafering of ultra-thin silicon substrates by MeV hydrogen implantation: effects of fluence and energy. Spring E-MRS Conference, May 2016, Lille, France. ⟨hal-01452436⟩

Wafering of ultra-thin silicon substrates by MeV hydrogen implantation: effects of fluence and energy

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