Passivation and electronic properties of germanium functionalized by self−assembled monolayers

V. Gadenne; L. Fillaud; B. Jousselme; V. Malytskyi; J.M. Raimundo; L. Patrone

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Passivation and electronic properties of germanium functionalized by self−assembled monolayers

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1

V. Gadenne

Function : Author
PersonId : 180211
IdHAL : virginie-gadenne
ORCID : 0000-0002-8029-5894
IdRef : 152912452

L. Fillaud

Function : Author

B. Jousselme

Function : Author

V. Malytskyi

Function : Author

J.M. Raimundo

Function : Author
PersonId : 754984
IdHAL : jean-manuel-raimundo
ORCID : 0000-0003-4090-0479
IdRef : 188867163

L. Patrone

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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https://hal-amu.archives-ouvertes.fr/hal-01456876

Submitted on : Monday, February 6, 2017-9:42:44 AM

Last modification on : Friday, March 24, 2023-2:53:03 PM

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hal-01456876 , version 1 (06-02-2017)

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HAL Id : hal-01456876 , version 1

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V. Gadenne, L. Fillaud, B. Jousselme, V. Malytskyi, J.M. Raimundo, et al.. Passivation and electronic properties of germanium functionalized by self−assembled monolayers . Conférence Nationale sur les Processus ULtimes d’épitaxie des SEmiconducteurs, Jul 2016, Marseille, France. ⟨hal-01456876⟩

Passivation and electronic properties of germanium functionalized by self−assembled monolayers

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