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Phase formation between Ni thin films and GaAs substrate

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https://hal-amu.archives-ouvertes.fr/hal-01753365
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Submitted on : Thursday, March 29, 2018 - 3:54:23 PM
Last modification on : Tuesday, March 30, 2021 - 3:22:44 AM

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  • HAL Id : hal-01753365, version 1

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S. Zhiou, M.C. Bennoudia, M. Texier, K. Hoummada. Phase formation between Ni thin films and GaAs substrate. Materials for Advanced Metallization (MAM 2017), Mar 2017, Dresde, Germany. ⟨hal-01753365⟩

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