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Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

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https://hal-amu.archives-ouvertes.fr/hal-02132134
Contributor : Jean-Luc Autran <>
Submitted on : Thursday, May 16, 2019 - 6:21:15 PM
Last modification on : Tuesday, July 23, 2019 - 11:28:06 AM

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K. Nehari, N. Cavassilas, Jean-Luc Autran, M. Bescond, Daniela Munteanu, et al.. Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study. Solid-State Electronics, Elsevier, 2006, 50 (4), pp.716-721. ⟨10.1016/j.sse.2006.03.041⟩. ⟨hal-02132134⟩

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