Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

K. Nehari (1) , N. Cavassilas (1) , Jean-Luc Autran (1) , M. Bescond (1) , Daniela Munteanu (1) , M. Lannoo (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Domains: Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics

K. Nehari, N. Cavassilas, Jean-Luc Autran, M. Bescond, Daniela Munteanu, et al.. Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study. Solid-State Electronics, 2006, 50 (4), pp.716-721. ⟨10.1016/j.sse.2006.03.041⟩. ⟨hal-02132134⟩