Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

K. Nehari; N. Cavassilas; Jean-Luc Autran; M. Bescond; Daniela Munteanu; M. Lannoo

doi:10.1016/j.sse.2006.03.041

Journal articles

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

K. Nehari ¹ N. Cavassilas ¹ Jean-Luc Autran ¹ M. Bescond ¹ Daniela Munteanu ¹ M. Lannoo ¹

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Document type :

Journal articles

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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https://hal-amu.archives-ouvertes.fr/hal-02132134
Contributor : Jean-Luc Autran <>
Submitted on : Thursday, May 16, 2019 - 6:21:15 PM
Last modification on : Tuesday, March 30, 2021 - 3:23:41 AM

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

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Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

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