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Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

K. Nehari 1 N. Cavassilas 1 Jean-Luc Autran 1 M. Bescond 1 Daniela Munteanu 1 M. Lannoo 1 
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
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https://hal-amu.archives-ouvertes.fr/hal-02132134
Contributor : Jean-Luc Autran Connect in order to contact the contributor
Submitted on : Thursday, May 16, 2019 - 6:21:15 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:03 PM

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K. Nehari, N. Cavassilas, Jean-Luc Autran, M. Bescond, Daniela Munteanu, et al.. Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study. Solid-State Electronics, Elsevier, 2006, 50 (4), pp.716-721. ⟨10.1016/j.sse.2006.03.041⟩. ⟨hal-02132134⟩

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