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A novel in-situ SOI characterization technique: the intrinsic point-probe MOSFET

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https://hal-amu.archives-ouvertes.fr/hal-02132540
Contributor : Daniela Munteanu <>
Submitted on : Friday, May 17, 2019 - 11:33:47 AM
Last modification on : Wednesday, July 10, 2019 - 1:24:03 AM

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A.M. Ionescu, Daniela Munteanu. A novel in-situ SOI characterization technique: the intrinsic point-probe MOSFET. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2001, 22 (4), pp.166-169. ⟨10.1109/55.915601⟩. ⟨hal-02132540⟩

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