Abstract : We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (>1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modeling approach in a generic reversely biased bulk junction.
https://hal-amu.archives-ouvertes.fr/hal-02263526
Contributor : Daniela Munteanu <>
Submitted on : Tuesday, November 10, 2020 - 10:55:00 AM Last modification on : Monday, March 29, 2021 - 3:08:10 PM Long-term archiving on: : Friday, February 12, 2021 - 12:15:40 PM