Journal articles
Terrestrial Neutron-Induced Single Events in GaN
Abstract : We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (>1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modeling approach in a generic reversely biased bulk junction.
Cited literature [21 references]
https://hal-amu.archives-ouvertes.fr/hal-02263526
Contributor : Daniela Munteanu <>
Submitted on : Tuesday, November 10, 2020 - 10:55:00 AM
Last modification on : Tuesday, November 10, 2020 - 2:04:08 PM
Contributor : Daniela Munteanu <>
Submitted on : Tuesday, November 10, 2020 - 10:55:00 AM
Last modification on : Tuesday, November 10, 2020 - 2:04:08 PM
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MRel_2019_Munteanu_HAL.pdf
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