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Terrestrial Neutron-Induced Single Events in GaN

Abstract : We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (>1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modeling approach in a generic reversely biased bulk junction.
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https://hal-amu.archives-ouvertes.fr/hal-02263526
Contributor : Daniela Munteanu <>
Submitted on : Tuesday, November 10, 2020 - 10:55:00 AM
Last modification on : Monday, March 29, 2021 - 3:08:10 PM
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Daniela Munteanu, Jean-Luc Autran. Terrestrial Neutron-Induced Single Events in GaN. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113357. ⟨10.1016/j.microrel.2019.06.049⟩. ⟨hal-02263526⟩

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