Terrestrial Neutron-Induced Single Events in GaN

Daniela Munteanu (1) , Jean-Luc Autran (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (>1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modeling approach in a generic reversely biased bulk junction.

Mots clés: Gallium nitride; single events; atmospheric neutrons; neutron interactions; Geant4; radiation transport; random-walk drift-diffusion

Domaines: Micro et nanotechnologies/Microélectronique

Daniela Munteanu, Jean-Luc Autran. Terrestrial Neutron-Induced Single Events in GaN. Microelectronics Reliability, 2019, 100-101, pp.113357. ⟨10.1016/j.microrel.2019.06.049⟩. ⟨hal-02263526⟩